BUK455 DATASHEET PDF

Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Accessories supplied. BUKA Powermos Transistor: 60v, 41a. N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in. Details, datasheet, quote on part number: BUKA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK Drain-source voltage Drain current (DC).

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Avalanche energy test circuit. Typical reverse diode current. Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN. The information presented in this document does not form part of datasheft quotation or contract, it is believed to be accurate and reliable and may be changed without notice.

UNIT – – 1. Normalised avalanche energy rating. Exposure to limiting values for extended periods may affect device reliability.

Typical turn-on gate-charge characteristics.

BUK455-200A

Application information Where application information is given, it is advisory and does not form part of the specification. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. TOAB; pin 2 connected to mounting base.

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August 6 Rev 1. Typical capacitances, Ciss, Coss, Crss. VDD August 5 Rev 1. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

BUKA NTE Equivalent NTE N channel MOSFET – Wholesale Electronics

Normalised drain-source on-state resistance. Stress above one or more of the limiting values may cause permanent damage to the device.

Normalised buk545 drain current. Refer to mounting instructions for TO envelopes. August 6 Rev 1. Typical turn-on gate-charge characteristics. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may datasheeg changed without notice.

Application information Where application information is given, it is advisory and does not form part of the specification.

C Philips Electronics N. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

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Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Philips customers using or selling adtasheet products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

Stress above one or more of the limiting values may cause permanent damage to the device. No liability will be accepted by the publisher for any consequence of its use. Typical reverse diode current. Exposure to limiting values for extended periods may affect device reliability. Product specification This data sheet contains final product specifications.

Normalised drain-source on-state resistance. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

Philips – datasheet pdf

Normalised continuous drain current. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide.

These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Typical datxsheet, Ciss, Coss, Crss.