BUZ 73 L. V. 7 A. Ω. TO AB. CSA2. Maximum Ratings. Parameter. Symbol. Values. Unit. Continuous drain current. TC = 28 °C. ID. 7. A. BUZ73 from Motorola Solutions, Inc.. Find the PDF Datasheet, Specifications and Distributor Information. BUZ73 Datasheet, BUZ73 PDF, BUZ73 Data sheet, BUZ73 manual, BUZ73 pdf, BUZ73, datenblatt, Electronics BUZ73, alldatasheet, free, datasheet, Datasheets, .
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Dagasheet diode function is an integral property of the transistor. Symbols alphabetical 11 3. They permit the combination of fast switching times with high output power but low driving power. Screw tools must not touch the plastic package; therefore, cross-slotted screws are preferred. The defects are classified according to their type and their extent. This desire for reliability is also seen in the transient voltage protection in the byz73 state relay section of circuit and in the wiring of the board directly to the off-board switch and pushbutton rather than using connectors.
N-Channel MOSFETs (20V…300V) Power Transistor Power MOSFETs
Parameter is the drain-source voltage V DS which has the same rating. Download The assembly language source file is on this page. Annie Besant Road, Worli P.
D En construction mcanique, le roulement mcanique est un composant mcanique utilis pour le guidage en rotation ou en translation. Due to the special chip structure, and the positive temperature coefficient of R os onSIPMOS transistors show no second breakdown across the total range of the maximum datasheeg. Eltec Siemens House Industrial estate 3 f. For information, please contact NTN Engineering. When the drain- source voltage is negative, however, current can flow from source to drain through buz7 PN di- ode.
For insulated mounting of transistors in the cases TO TO 3TOand TOnote the increased catasheet resistance between transistor and heat sink. Absolute maximum ratings The limits stated in the data sheets are absolute limit values.
A gate-source voltage value which is smaller than the gate threshold voltage results in a highly resistive drain- source path.
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A Germanium or other material with an energy band gap of 0. The specified gate-source voltage V GS is set. The sign 0 on datashheet denotes diameter.
Compared with 60 Ncm, applying a max. Lot 1 8, Jalan P.
By utilizing or relying on software, firmware, hardware, design, service,information, or advice provided, mentioned, or made reference to in these pages, the user takes responsibility to assume all risk and associated with said activity and hold Richard Cappels harmless in the event of any loss or expense associated with said activity. Electrical characteristics 23 3. No warranties, use these pages at your own risk. Datashest design and trend-setting new discoveries in MOS technology resulted in new power transistors with hitherto datashete switching characteristics.
Box Taipei 5 3 6 datashet 71,03 2 7 8 60 tai engco Thailand B. Vous pouvez compter sur nous. The transistor can be destroyed by even momentary voltage spikes. The values of the dc voltage between gate-source and drain-source, as well as the measuring fre- quency are specified. The on-state resistance decreases more slowly. This means that at I F equal to or less than 0. The attainable breakdown voltage is not limited by the gate geometry.
BUZ73 데이터시트(PDF) – Inchange Semiconductor Company Limited
R DS represents the drain-source on-state resistance see equivalent circuit diagramm in paragraph 1. Silicon diox- ide isolates the gate from the epitaxial layer beneath it, and from the aluminum source metal- lization. T 3 The transistor continues to function as a Miller integrator but with the maximum Miller capac- itance.
The power supply filter capacitor is a mamoth uf rated at 40 volts so that it would be operated wll below its voltage and ripple current ratings, and can even loose a large percentage of its inital capacitance because of aging without affecting circuit operation. The screw head should datashedt be located directly on the terminal, but over the pressure plate to distribute the force properly.
The transistor blocks the current flow when the drain-source voltage is positive.
BUZ73 NTE Equivalent NTE POWER MOSFET N-CHANN – Wholesale Electronics
The duty cycle is the same as the one specified for the transistor. The information in this data book describes the type of component and shall not be considered as assured characteristics. Approx, dafasheet 2 g Dimensions in mm Absolute maximum ratings Drain-source voltage Drain-gate voltage, f? This ensures that the current is dis- tributed through the region between two cells, resulting in good utilization of the silicon.
DS onthis results in a lower resistance value. Single row deep groove ball bearings The single row deepgroove ball bearing is the most popular bearing.
Schematic circuit diagram to measure the datasheet transfer capacitance C rss when using a bridge without dc passage. Current can now flow through the chip in both directions. The gate is left free in one small area of the chip for wire bonding. A positive value corresponds to a positive voltage at the point defined by the first index, with respect to the point defined by the second index reference pointe.
The output voltage drops rapidly, as the Miller capacitance is small.
The assembly language source file is on this page. This results in a mounting force of max.